In this paper, we propose a novel magnetic tunnel junction (MTJ) based non-volatile ternary content-addressable memory (NV-TCAM) cell, which is composed of 15 transistors and 4 MTJs. By utilizing differential MTJs with complementary states and positive feedback of cross-coupled inverters for sensing, the proposed NV-TCAM cell can greatly improve the reliability of search operation. Moreover, since there is no static current during search operation, only dynamic charging and discharging current, the proposed NV-TCAM cell can be envisioned to achieve ultra-low power consumption. Additionally, by using only one transistor as the critical path between the match-line and GND, the search delay of the proposed NV-TCAM cell can be minimized, thereby achieving high-speed searching operation. Hybrid CMOS/MTJ simulation results show that the proposed NV-TCAM cell can achieve no search error rate when the TMR exceeds 180%, small worst-case search delay of 0.2 ns, low search-energy of 1.30 and 0.52 fJ/bit/search in the case of "mismatch" and "match" in a 144-bit word circuit.