Abstract:
Since the dual-threshold voltage assignment is an effective technique to reduce leakage power with negligible area overhead, we evaluate and compare the performance of an...Show MoreMetadata
Abstract:
Since the dual-threshold voltage assignment is an effective technique to reduce leakage power with negligible area overhead, we evaluate and compare the performance of an 8T SRAM cell in various dominant dual-Vt configurations in this paper, in order to provide the designer with a reasonable trade-off in SNM, leakage power, and delay for further different desired yields. According to simulation results, it is concluded that the configuration C8 has the highest SNM and high Vt Mnl can suppress the leakage current effectively. At last, the write and read delay time in different dual-Vt configurations are analyzed, and the reasons for delay variation are given.
Published in: 2011 9th IEEE International Conference on ASIC
Date of Conference: 25-28 October 2011
Date Added to IEEE Xplore: 27 February 2012
ISBN Information: