A study of dual-Vt configurations of an 8T SRAM cell in 45nm | IEEE Conference Publication | IEEE Xplore

A study of dual-Vt configurations of an 8T SRAM cell in 45nm


Abstract:

Since the dual-threshold voltage assignment is an effective technique to reduce leakage power with negligible area overhead, we evaluate and compare the performance of an...Show More

Abstract:

Since the dual-threshold voltage assignment is an effective technique to reduce leakage power with negligible area overhead, we evaluate and compare the performance of an 8T SRAM cell in various dominant dual-Vt configurations in this paper, in order to provide the designer with a reasonable trade-off in SNM, leakage power, and delay for further different desired yields. According to simulation results, it is concluded that the configuration C8 has the highest SNM and high Vt Mnl can suppress the leakage current effectively. At last, the write and read delay time in different dual-Vt configurations are analyzed, and the reasons for delay variation are given.
Date of Conference: 25-28 October 2011
Date Added to IEEE Xplore: 27 February 2012
ISBN Information:

ISSN Information:

Conference Location: Xiamen

References

References is not available for this document.