Abstract:
The origin of the on-state current (Ion) difference between dopant-segregated Schottky (DSS) source/drain MOSFET and conventional MOSFET with 20nm channel length is inves...Show MoreMetadata
Abstract:
The origin of the on-state current (Ion) difference between dopant-segregated Schottky (DSS) source/drain MOSFET and conventional MOSFET with 20nm channel length is investigated by device simulation. The simulation results coincide well with the published experimental result. It is revealed that the not-fully-depleted dopant-segregated layer leads to a severe DIBL effect which contributes to the Ion enhancement for DSS MOSFET.
Published in: 2011 9th IEEE International Conference on ASIC
Date of Conference: 25-28 October 2011
Date Added to IEEE Xplore: 27 February 2012
ISBN Information:
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