Abstract:
A novel vertical device structure based on semi-floating gate concept is reported and simulated by Sentaurus technology computer aided design (TCAD) in this paper. This d...Show MoreMetadata
Abstract:
A novel vertical device structure based on semi-floating gate concept is reported and simulated by Sentaurus technology computer aided design (TCAD) in this paper. This device can have the memory function with high density and speed. The device area can be reduced to be 4 F2 (F is the feature size) and the operating speed of the novel device can be better than that of dynamic random access memory (DRAM).
Published in: 2017 IEEE 12th International Conference on ASIC (ASICON)
Date of Conference: 25-28 October 2017
Date Added to IEEE Xplore: 11 January 2018
ISBN Information:
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