Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has gained great popularity in both academia and industry. As an emerging memory, it is regarded as a common memory that may replace SRAM and DRAM in computer system and other applications. However, there are still some challenges such as read reliability and read disturbance impeding mass production of STT-MRAM. This paper proposes a low-power-consumption read scheme with high read reliability. Due to the very low read current, this scheme effectively reduces the probability of read disturbance. Compared with conventional read scheme, the proposed scheme adopts a positive feedback scheme and a tail-current structure, achieving a large sensing margin (585mV) and consuming a small read current (5uA).