A high output voltage charge pump circuit utilizing vertical parallel plate (VPP) capacitors to boost voltage is proposed. With comparable capacitance density, the designed VPP capacitor owns a breakdown voltage much higher than that of metal-insulator-metal (MIM) capacitor. Thus, the output voltage and chip size of charge pump circuits are not limited by the pumping capacitors. To further improve the voltage pumping gain, the threshold voltage and the body effect coefficient of MOSFETs are removed by applying dynamic control to both the charge transfer switches (CTS's) and the MOSFETs' body voltages.