Abstract:
Now, double-Gate device technology is widely used for enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been pro...Show MoreMetadata
Abstract:
Now, double-Gate device technology is widely used for enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been proposed to enable Vth adjustment. It is revealed that SRAM performance have been increased by introducing the independent-double-gate FinFET.
Published in: 2017 IEEE 12th International Conference on ASIC (ASICON)
Date of Conference: 25-28 October 2017
Date Added to IEEE Xplore: 11 January 2018
ISBN Information: