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Advanced FinFET technologies for boosting SRAM performance | IEEE Conference Publication | IEEE Xplore

Advanced FinFET technologies for boosting SRAM performance


Abstract:

Now, double-Gate device technology is widely used for enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been pro...Show More

Abstract:

Now, double-Gate device technology is widely used for enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been proposed to enable Vth adjustment. It is revealed that SRAM performance have been increased by introducing the independent-double-gate FinFET.
Date of Conference: 25-28 October 2017
Date Added to IEEE Xplore: 11 January 2018
ISBN Information:
Conference Location: Guiyang, China

References

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