Because of low temperature and CMOS compatible process properties, CVD based amorphous silicon (α-Si) has found extensive application in advanced CMOS and MEMS process, and is attracting more and more interests in research work of nano electronic devices. In this work, CVD based α-Si film was developed and characterized. And α-Si based resistor device was then fabricated using Ti\TiN as the electrode layer. IV and TCR properties were characterized. Based on the measurement data, good ohmic contact was achieved, and there was clearly exponential relationship between resistance and temperature which was consistent with Arrhenius law.