Loading [a11y]/accessibility-menu.js
A 1.39-V input fast-transient-response digital LDO composed of low-voltage MOS transistors in 40-nm CMOS process | IEEE Conference Publication | IEEE Xplore

A 1.39-V input fast-transient-response digital LDO composed of low-voltage MOS transistors in 40-nm CMOS process


Abstract:

A fast transient-response digital low-dropout (LDO) voltage regulator comprising only low-voltage MOS transistors was developed. The input voltage can be higher than the ...Show More

Abstract:

A fast transient-response digital low-dropout (LDO) voltage regulator comprising only low-voltage MOS transistors was developed. The input voltage can be higher than the withstand voltage of the low-voltage MOS transistors by the proposed withstand-voltage relaxation scheme. The switching frequency of 1 GHz can be achieved using small-dimension low-voltage power-MOS transistors. The LDO occupies only 0.057 mm2 area using 40-nm CMOS technology, and covers a wide range of load currents from 400 μA to 250 mA. The response time is only 0.07 μs.
Date of Conference: 14-16 November 2011
Date Added to IEEE Xplore: 09 January 2012
ISBN Information:
Conference Location: Jeju, Korea (South)

References

References is not available for this document.