This paper describes a new high power, PAE, and integration 2-stage C-band fully matched GaN (Gallium Nitride) HEMT (High Electron Mobility Transistors) FET MMIC (Monolithic Microwave Integrated Circuit) high power amplifier (HPA) QPA2309 in an overmold QFN (Quad Flat No-Lead) package. The MMIC uses Qorvo's high performance 50 V, 0.25 um, GaN-on-SiC process technology. Dimensions of the complete PA module are $7\text{mm}\times 7 \text{mm}\times 0.8\text{mm}$. This PA delivers a typical 51.2 dBm (132.4 W) pulsed power, 51.6 % Power added efficiency (PAE) and 23.2 dB compressed gain.