Abstract:
In this paper, we report on AlGaN/GaN HEMT device for Ka-band and Q/V-band applications. The designs of gate electrode are based on 0.12 μm gate length technology (NP12)....Show MoreMetadata
Abstract:
In this paper, we report on AlGaN/GaN HEMT device for Ka-band and Q/V-band applications. The designs of gate electrode are based on 0.12 μm gate length technology (NP12). Performance of the GaN HEMT device by outside source substrate via (OSV) design changed. It experimentally showed that the source inductance of the device influences its fmax characteristic. Using 4x50 μm device, the fmax of 212 GHz, small signal gain of 16dB and 11dB were measured at 30 GHz and 50 GHz, the saturation power density of 4.9 W/mm and maximum power-added efficiency (PAE) of 55% were achieved at 29GHz.
Published in: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Date of Conference: 16-19 October 2022
Date Added to IEEE Xplore: 27 February 2023
ISBN Information:
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