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A 29-dBm, 34% PAE E-Band Dual-Input Doherty Power Amplifier Using 40-nm GaN Technology | IEEE Conference Publication | IEEE Xplore

A 29-dBm, 34% PAE E-Band Dual-Input Doherty Power Amplifier Using 40-nm GaN Technology


Abstract:

A low E-band dual-input two-stage Doherty power amplifier is demonstrated using 40-nm T-gate GaN technology. Power-dependent biasing is used to enhance efficiency, with z...Show More

Abstract:

A low E-band dual-input two-stage Doherty power amplifier is demonstrated using 40-nm T-gate GaN technology. Power-dependent biasing is used to enhance efficiency, with zero bias current of the auxiliary amplifier in backoff while the same bias is applied to both main and auxiliary amplifier at full power to achieve high output power and efficiency. Using the Ozen lumped-element Doherty combiner design technique, the effects of FET parasitic components are minimized. In on-wafer testing, the fabricated MMIC achieves PAE of 34% at output power of 25 dBm (backoff case) and at 29 dBm (full power case) at 71 GHz.
Date of Conference: 16-19 October 2022
Date Added to IEEE Xplore: 27 February 2023
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Conference Location: Phoenix, AZ, USA

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