Abstract:
A low E-band dual-input two-stage Doherty power amplifier is demonstrated using 40-nm T-gate GaN technology. Power-dependent biasing is used to enhance efficiency, with z...Show MoreMetadata
Abstract:
A low E-band dual-input two-stage Doherty power amplifier is demonstrated using 40-nm T-gate GaN technology. Power-dependent biasing is used to enhance efficiency, with zero bias current of the auxiliary amplifier in backoff while the same bias is applied to both main and auxiliary amplifier at full power to achieve high output power and efficiency. Using the Ozen lumped-element Doherty combiner design technique, the effects of FET parasitic components are minimized. In on-wafer testing, the fabricated MMIC achieves PAE of 34% at output power of 25 dBm (backoff case) and at 29 dBm (full power case) at 71 GHz.
Published in: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Date of Conference: 16-19 October 2022
Date Added to IEEE Xplore: 27 February 2023
ISBN Information: