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Diamond-BN Heterojunctions for High Power Devices: The Ultimate HEMT? | IEEE Conference Publication | IEEE Xplore

Diamond-BN Heterojunctions for High Power Devices: The Ultimate HEMT?


Abstract:

This review explores the properties of diamond and boron nitride as a promising materials combination for high electron mobility transistors, HEMTs. These ultra-wide band...Show More

Abstract:

This review explores the properties of diamond and boron nitride as a promising materials combination for high electron mobility transistors, HEMTs. These ultra-wide bandgap materials exhibit excellent electronic properties as well as high thermal conductivity for superior heat dissipation. The lattice mismatch between cubic boron nitride (c-BN) and diamond is \sim \mathbf{1. 4 \%} allowing for the epitaxial growth of heterojunction devices. However, to demonstrate a viable c-BN/diamond HEMT technology a number of significant challenges remain, including: the epitaxial growth of single crystal heterojunctions on large area substrates; control of phosphorus dopant incorporation for n-type channels; and achieving low specific contact resistance to source and drain regions. There has been recent progress towards achieving these goals, paving the way for a new generation of high-power electronic devices for DC and RF applications.
Date of Conference: 27-30 October 2024
Date Added to IEEE Xplore: 12 November 2024
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Conference Location: Fort Lauderdale, FL, USA

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