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A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology | IEEE Conference Publication | IEEE Xplore

A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology

Publisher: IEEE

Abstract:

This paper presents a high-power high-efficiency stacked D-band power amplifier (PA) in a 250-nm HBT technology. The pseudo-differential PA is 2-way power-combined with a...View more

Abstract:

This paper presents a high-power high-efficiency stacked D-band power amplifier (PA) in a 250-nm HBT technology. The pseudo-differential PA is 2-way power-combined with a power combining network exhibiting a single-transformer footprint and a low loss by reflecting asymmetry leaking to the common mode. The presented PA has a saturated output power of 20.9 dBm and a peak power-added efficiency (PAE) of 24.3%. A small-signal gain of \mathbf{1 4. 2} \mathbf{d B} is obtained with a 3-dB bandwidth of 19 GHz.
Date of Conference: 27-30 October 2024
Date Added to IEEE Xplore: 12 November 2024
ISBN Information:

ISSN Information:

Publisher: IEEE
Conference Location: Fort Lauderdale, FL, USA

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