Abstract:
A 16 kb 1T1C FeRAM test chip is designed and fabricated in a 0.35 /spl mu/m FeRAM process. The test chip uses a reference generation scheme that balances fatigue evenly b...Show MoreMetadata
Abstract:
A 16 kb 1T1C FeRAM test chip is designed and fabricated in a 0.35 /spl mu/m FeRAM process. The test chip uses a reference generation scheme that balances fatigue evenly between memory cells and reference cells, hence providing the 1T1C cell with 2T2C robustness to fatigue. The test chip achieves an access time of 62 ns at 3V.
Published in: Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)
Date of Conference: 15-15 May 2002
Date Added to IEEE Xplore: 07 August 2002
Print ISBN:0-7803-7250-6