Abstract:
This paper presents a compact model considering the high-frequency and noise effects at the gate of MOS transistors which are caused by the channel resistance in series t...Show MoreMetadata
Abstract:
This paper presents a compact model considering the high-frequency and noise effects at the gate of MOS transistors which are caused by the channel resistance in series to the gate capacitance. The real part of input impedance, nonquasistatic charge variations and induced gate noise with correlation to the drain noise are the results. A model equation of the induced gate noise is developed for MOSFETs with very short channel lengths. Comparisons with measurements verify the accuracy of the model and its validity for short and long channel transistors.
Published in: Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)
Date of Conference: 15-15 May 2002
Date Added to IEEE Xplore: 07 August 2002
Print ISBN:0-7803-7250-6