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SOI Hall effect sensor operating up to 270/spl deg/C | IEEE Conference Publication | IEEE Xplore

SOI Hall effect sensor operating up to 270/spl deg/C


Abstract:

The design of a 5 Volts fully integrated magnetic sensor able to operate up to 270/spl deg/C is presented. Fabricated in a Partially Depleted (PD) 1 /spl mu/m SOI process...Show More

Abstract:

The design of a 5 Volts fully integrated magnetic sensor able to operate up to 270/spl deg/C is presented. Fabricated in a Partially Depleted (PD) 1 /spl mu/m SOI process, this monolithic sensor comprises a resistive Hall plate, an amplifier stage and an A/D converter delivering a temperature stabilized 8-bit digital readout of the magnetic field. This circuit uses analog techniques for continuous compensation of temperature. Design issues inherent to partially depleted SOI, as well as constraints due to high temperature, are discussed.
Date of Conference: 15-15 May 2002
Date Added to IEEE Xplore: 07 August 2002
Print ISBN:0-7803-7250-6
Conference Location: Orlando, FL, USA

References

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