Abstract:
An accurate substrate noise coupling macromodel for heavily doped CMOS processes is presented. The model is based on Z parameters that are scalable with contact separatio...Show MoreMetadata
Abstract:
An accurate substrate noise coupling macromodel for heavily doped CMOS processes is presented. The model is based on Z parameters that are scalable with contact separation and size. Extensive experimental validations of the model have demonstrated that the modeled Z parameters are most often accurate to within 2-8%.
Published in: Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)
Date of Conference: 15-15 May 2002
Date Added to IEEE Xplore: 07 August 2002
Print ISBN:0-7803-7250-6