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A comprehensive geometry-dependent macromodel for substrate noise coupling in heavily doped CMOS processes | IEEE Conference Publication | IEEE Xplore

A comprehensive geometry-dependent macromodel for substrate noise coupling in heavily doped CMOS processes


Abstract:

An accurate substrate noise coupling macromodel for heavily doped CMOS processes is presented. The model is based on Z parameters that are scalable with contact separatio...Show More

Abstract:

An accurate substrate noise coupling macromodel for heavily doped CMOS processes is presented. The model is based on Z parameters that are scalable with contact separation and size. Extensive experimental validations of the model have demonstrated that the modeled Z parameters are most often accurate to within 2-8%.
Date of Conference: 15-15 May 2002
Date Added to IEEE Xplore: 07 August 2002
Print ISBN:0-7803-7250-6
Conference Location: Orlando, FL, USA

References

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