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Low-power low-noise highly ESD robust LNA, and VCO design using above-IC inductors | IEEE Conference Publication | IEEE Xplore

Low-power low-noise highly ESD robust LNA, and VCO design using above-IC inductors


Abstract:

Above-IC inductors enable low-power RF circuit design, and in addition efficiently protect the RF pins against electrostatic discharge (ESD) stress. This is demonstrated ...Show More

Abstract:

Above-IC inductors enable low-power RF circuit design, and in addition efficiently protect the RF pins against electrostatic discharge (ESD) stress. This is demonstrated using above-IC inductors in the design of a fully integrated 5 GHz ESD-protected LNA and VCO in 90 nm CMOS. The LNA without ESD protection shows 1.4 dB NF, with 18 dB gain, drawing 4 mA from a 1.2 V supply. The ESD protected LNA has a 2.2 dB NF and 17.6 dB gain while sustaining human body model (HBM) ESD stress of above 8 kV. The 5.4 GHz VCO has a current consumption of 150 muA with a 1.2 V supply, and a 10 % tuning range with a worst case phase noise of -111 dBc/Hz at 1 MHz offset
Date of Conference: 21-21 September 2005
Date Added to IEEE Xplore: 10 January 2006
Print ISBN:0-7803-9023-7

ISSN Information:

Conference Location: San Jose, CA, USA

References

References is not available for this document.