Abstract:
Bandgap-engineered SiGe HBTs are fully-Si-manufacturing compatible, and can be fabricated in a BiCMOS platform on 200 mm wafers at high yield. SiGe HBTs are capable of ex...Show MoreMetadata
Abstract:
Bandgap-engineered SiGe HBTs are fully-Si-manufacturing compatible, and can be fabricated in a BiCMOS platform on 200 mm wafers at high yield. SiGe HBTs are capable of extremely high frequency operation, exhibit very low broadband and 1/f noise, and high transconductance per unit area, all at very modest lithographic nodes (e.g., 200 GHz / 285 GHz fT / fmax at 130 nm), making them near-ideal devices for high-speed, mixed-signal circuits. In this work we discuss new technology trends, ultimate performance limits, and emerging application opportunities in SiGe technology.
Published in: 2008 IEEE Custom Integrated Circuits Conference
Date of Conference: 21-24 September 2008
Date Added to IEEE Xplore: 17 November 2008
ISBN Information: