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A 0.8GHz–10.6GHz SDR low-noise amplifier in 0.13-μm CMOS | IEEE Conference Publication | IEEE Xplore

A 0.8GHz–10.6GHz SDR low-noise amplifier in 0.13-μm CMOS


Abstract:

An ultra-wideband low-noise amplifier (LNA) is designed for software-defined radios (SDR). Noise-cancellation common-gate stage is combined with capacitive cross coupling...Show More

Abstract:

An ultra-wideband low-noise amplifier (LNA) is designed for software-defined radios (SDR). Noise-cancellation common-gate stage is combined with capacitive cross coupling for wideband input impedance matching and small noise figure (NF). T-coils and inductive peaking are employed to extend the output bandwidth and to reject the noise from the loading resistors. Linearization using second-order intermodulation injection is adopted to improve the IIP3. Operated at 1.5 V from 0.8 GHz to 10.6 GHz, the 0.13-mum CMOS LNA measures 16-dB gain, -12 dB S11, 3.4-5.6 dB NF, and 1.6-dBm IIP3.
Date of Conference: 21-24 September 2008
Date Added to IEEE Xplore: 17 November 2008
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Conference Location: San Jose, CA, USA

References

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