Abstract:
Penetrating into sub-tenth micron regime, variations in transistor characteristics are having a more critical impact on the design of high-density memories, such as SRAM,...Show MoreMetadata
Abstract:
Penetrating into sub-tenth micron regime, variations in transistor characteristics are having a more critical impact on the design of high-density memories, such as SRAM, Flash and ROM. In this session, two papers from industry and five papers from academia will be presented.
Published in: 2008 IEEE Custom Integrated Circuits Conference
Date of Conference: 21-24 September 2008
Date Added to IEEE Xplore: 17 November 2008
ISBN Information: