Abstract:
The European project DOTFIVE is a 3-year project targeting a 0.5 THz SiGe Heterojunction Bipolar Transistor for the future development of communication, imaging and radar...Show MoreMetadata
Abstract:
The European project DOTFIVE is a 3-year project targeting a 0.5 THz SiGe Heterojunction Bipolar Transistor for the future development of communication, imaging and radar applications. The project proceeds along two paths. It explores further evolutionary scaling of self-aligned selective epitaxial base HBTs, and advanced process modules and disruptive novel device architectures. In this paper, the scaling perspectives and limitations of conventional device architectures will be reviewed. The advanced process modules and novel device architectures will be proposed.
Published in: 2009 IEEE Custom Integrated Circuits Conference
Date of Conference: 13-16 September 2009
Date Added to IEEE Xplore: 09 October 2009
ISBN Information: