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Recent advances in GaN power electronics | IEEE Conference Publication | IEEE Xplore

Recent advances in GaN power electronics


Abstract:

Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power switching applications having weight and volume constraints, while simultaneously needi...Show More

Abstract:

Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power switching applications having weight and volume constraints, while simultaneously needing a high overall efficiency. With its projected 100x performance advantage over silicon, GaN is a game changing technology for energy-efficient power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the potential applications for this technology.
Date of Conference: 22-25 September 2013
Date Added to IEEE Xplore: 11 November 2013
Electronic ISBN:978-1-4673-6146-0

ISSN Information:

Conference Location: San Jose, CA, USA

References

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