Abstract:
Our study breaks down the dependence of SRAM read current (Iread) variability (σIread) into constituting pass-gate (PG) and pull down (PD) NMOS transistor variability. We...Show MoreMetadata
Abstract:
Our study breaks down the dependence of SRAM read current (Iread) variability (σIread) into constituting pass-gate (PG) and pull down (PD) NMOS transistor variability. We report a bottoms-up model for σIread including feedback in stacked transistors and discuss its implications on SRAM performance.
Date of Conference: 22-25 September 2013
Date Added to IEEE Xplore: 11 November 2013
Electronic ISBN:978-1-4673-6146-0