Loading [a11y]/accessibility-menu.js
Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies | IEEE Conference Publication | IEEE Xplore

Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies


Abstract:

The Quasi-3D allows to drastically speed up TCAD and mixed-mode simulations of finFET technologies, by solving on well-chosen 2D finFET cross sections. The method accurat...Show More

Abstract:

The Quasi-3D allows to drastically speed up TCAD and mixed-mode simulations of finFET technologies, by solving on well-chosen 2D finFET cross sections. The method accurately reproduces important transistor metrics requiring only 1/20th of the simulation time.
Date of Conference: 22-25 September 2013
Date Added to IEEE Xplore: 11 November 2013
Electronic ISBN:978-1-4673-6146-0

ISSN Information:

Conference Location: San Jose, CA, USA

Contact IEEE to Subscribe

References

References is not available for this document.