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Monolithic very high frequency GaN switched-mode power converters | IEEE Conference Publication | IEEE Xplore

Monolithic very high frequency GaN switched-mode power converters


Abstract:

This paper describes very high frequency (10-200 MHz) switched-mode power converters using custom GaN chips with integrated power switches and gate drivers, allowing stan...Show More

Abstract:

This paper describes very high frequency (10-200 MHz) switched-mode power converters using custom GaN chips with integrated power switches and gate drivers, allowing standard logic-level PWM control inputs. Circuit design techniques are described in depletion-mode 0.15μm RF and 0.25μm switch GaN-on-SiC processes, including integration of gate-drive and level translation circuits. Operating from up to 25 V dc input voltage, efficiencies exceeding 90% are demonstrated at switching frequencies up to 100 MHz and at power levels exceeding 10 W. When used as an envelope-tracking drain supply modulator for high-efficiency RF transmitters, a monolithic two-phase 25 V, 10 W GaN converter prototype achieves 20 MHz large-signal tracking bandwidth with 89.7% average power-stage efficiency.
Date of Conference: 28-30 September 2015
Date Added to IEEE Xplore: 30 November 2015
ISBN Information:
Conference Location: San Jose, CA, USA

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