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Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation | IEEE Conference Publication | IEEE Xplore

Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation


Abstract:

An artificial neural network based on resistive switching memristors is implemented and simulated in LTspice. The influence of memristor variability and the reduction of ...Show More

Abstract:

An artificial neural network based on resistive switching memristors is implemented and simulated in LTspice. The influence of memristor variability and the reduction of the continuous range of synaptic weights into a discrete set of conductance levels is analyzed. To do so, a behavioral model is proposed for multilevel resistive switching memristors based on Al-doped HfO2 dielectrics, and it is implemented in a spice based circuit simulator. The model provides an accurate description of the conductance in the different conductive states in addition to describe the device-to-device variability.
Date of Conference: 18-20 November 2020
Date Added to IEEE Xplore: 30 November 2020
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Conference Location: Segovia, Spain

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