Abstract:
Due to technology scaling, radiation induced errors which cause a double node upset (DNU) have become more common in data storage elements. All current designs either suf...Show MoreMetadata
Abstract:
Due to technology scaling, radiation induced errors which cause a double node upset (DNU) have become more common in data storage elements. All current designs either suffer from high area and performance overhead or are vulnerable to an error after a DNU thus making them unsuitable for clock gating. A novel latch design is proposed in which all internal and external nodes are capable of recovering the previous value after a single or double node upset. The proposed latch offers higher speed, lower power consumption and lower area requirements compared to all existing DNU tolerant latches capable of recovering all nodes.
Published in: 2016 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)
Date of Conference: 19-20 September 2016
Date Added to IEEE Xplore: 27 October 2016
ISBN Information:
Electronic ISSN: 2377-7966