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All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs | IEEE Conference Publication | IEEE Xplore

All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs


Abstract:

High Al-composition AlGaN materials, by virtue of their ultra-wide band gap, are promising candidates for realizing high power density mm-wave transistors. However, low e...Show More

Abstract:

High Al-composition AlGaN materials, by virtue of their ultra-wide band gap, are promising candidates for realizing high power density mm-wave transistors. However, low electron affinity in these materials make it very difficult to make ohmic contacts for Al-composition above 65%. On the other hand, to achieve high cutoff frequency, it is critical to scale the transistors. In this work, we report the first ever DC and small-signal RF performance of a scaled MOCVD-grown UWBG A10.70Ga0.30N MESFET with LG = 250 nm.
Date of Conference: 24-27 June 2018
Date Added to IEEE Xplore: 23 August 2018
ISBN Information:
Conference Location: Santa Barbara, CA, USA