Optoelectronics based on Vertical Transport in Multi-layer MoS2 | IEEE Conference Publication | IEEE Xplore

Optoelectronics based on Vertical Transport in Multi-layer MoS2


Abstract:

High photon absorption and photoconductive gain observed in 2D Transition Metal Dichalcogenides make them exciting candidates for high performance photodetectors and phot...Show More

Abstract:

High photon absorption and photoconductive gain observed in 2D Transition Metal Dichalcogenides make them exciting candidates for high performance photodetectors and photovoltaics [1]. However, slow response times and low Voc (open circuit voltage) have hindered the development of reliable optoelectronic devices [1]. Most attempts to mitigate these disadvantages involve fabrication of complex heterostructures [2]-[4], which may render them unfit for large area production. Besides, almost all reports on MeSi-bascd opto-electronics exploit its lateral transport while studies on vertical transport towards detectors and photovoltaics are at an embryonic stage. In this work, we demonstrate that a facile vertical metal/multilaycr-Mo'Sc/rnctal device can be engineered to enable both excellent photodetectors (with high responsivity > 3 A/W & good speed ~ 1 ms) OR high Voc (~0.5 V) photovoltaics. We adopt a conscious design strategy of employing vertical instead of lateral transport through multi-layer MoS2 as this provides both larger area for photon absorption, as well as short charge transfer length (enabling effective separation) [Fig l(a)].
Date of Conference: 24-27 June 2018
Date Added to IEEE Xplore: 23 August 2018
ISBN Information:
Conference Location: Santa Barbara, CA, USA

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