We demonstrate a novel VO₂-based edge-triggered (ET) three-terminal Mott switch that leverages the displacement current induced by the switching of the gate voltage pulse to trigger an IMT in the VO2 channel. The design overcomes a long-standing challenge of realizing a three-terminal VO₂ switch due to the absence of field-effect induced IMT in VO₂. The ET Mott switch also enables isolation between the input & the output (at steady state), and facilitates reduction in the effective trigger voltage in comparison to the two-terminal configuration. We show using simulations that these properties can be exploited to enable a BEOL-compatible 3T selector for MTJ-based cross-point memory, showing 3.4× higher cell TMR, as well as 45% & 40% lower sneak-path current & power, respectively.