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Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State | IEEE Conference Publication | IEEE Xplore

Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State


Abstract:

Among various phase-change memory materials (PCMs), Ge 2 Sb 2 Te 5 (GST) is an outstanding representative, widely used in both optical storage and electronic memories [1]...Show More

Abstract:

Among various phase-change memory materials (PCMs), Ge 2 Sb 2 Te 5 (GST) is an outstanding representative, widely used in both optical storage and electronic memories [1] . The intrinsic drawbacks of this GST, however, such as tellurium volatility and low amorphous phase stability (resistance retention), hinder it from being a perfect candidate. Tellurium-free antimony-based PCMs have been the subject of considerable recent interest, due to their excellent resistance contrast, rapid crystallization, and high amorphous phase stability [2] . Moreover, with increasing demand for high-capacity memory in consumer electronics, the multibit high-density storage capability of various memory devices has become very attractive [3] - [5] . Here, a bilayer Ga-Sb stack structure is demonstrated, showing multilevel switching properties. The origin of multilevel states and their stability are also studied.
Date of Conference: 20-23 June 2021
Date Added to IEEE Xplore: 01 July 2021
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ISSN Information:

Conference Location: Santa Barbara, CA, USA

References

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