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First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates | IEEE Conference Publication | IEEE Xplore

First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates


Abstract:

Gallium nitride's wide bandgap and high electron velocity make it highly attractive for both commercial and defense mm-wave applications. Gallium nitride high-electron-mo...Show More

Abstract:

Gallium nitride's wide bandgap and high electron velocity make it highly attractive for both commercial and defense mm-wave applications. Gallium nitride high-electron-mobility-transistors (GaN HEMTs) today can supply high power at millimeter-wave frequencies, thereby counteracting high atmospheric attenuation at these frequencies [1]. However, power amplifiers based on GaN HEMTs continue to be limited by heat dissipation issues, highlighting the importance of the thermal management in HEMTs.
Date of Conference: 26-29 June 2022
Date Added to IEEE Xplore: 19 August 2022
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ISSN Information:

Conference Location: Columbus, OH, USA

References

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