Millimeter-wave applications above Ka-band have become increasingly important for the defense sector. With the overcrowded spectrum at lower microwave frequencies, more systems are demanding the use of spectrum space at V-, and W-band with wider bandwidth. Gallium-Nitride (GaN) has intrinsic capability to enable its high-frequency performance, allowing the capability for solid-state technology for high-power millimeter wave applications [1]. In order to address the DoD needs and to provide a technology platform, BAE Systems is developing a “Scaled GaN HEMT Technology” that offers the required gain and power added efficiency at V- and W-band applications while still providing sufficient output power density. This paper describes the results from BAE Systems on-going efforts on 90 nm GaN Technology development. Maturation of the 90 nm GaN process, is one of the next key objectives within the BAE Systems foundry.