Fully Epitaxial, Reconfigurable Ferroelectric ScAlN/AlGaN/GaN HEMTs | IEEE Conference Publication | IEEE Xplore

Fully Epitaxial, Reconfigurable Ferroelectric ScAlN/AlGaN/GaN HEMTs

Publisher: IEEE

Abstract:

Reconfigurable devices and circuits have long been sought for their flexibility, cost reduction, energy efficiency, scalability, and versatility. One good example of a re...View more

Abstract:

Reconfigurable devices and circuits have long been sought for their flexibility, cost reduction, energy efficiency, scalability, and versatility. One good example of a reconfigurable device is a ferroelectric transistor, where the carrier concentration in the channel can be programmed due to the gradual switching properties of ferroelectrics. There have been ongoing efforts to further introduce ferroelectrics into high electron mobility transistors, which could enable enhanced-mode operation, dynamic V th tuning, and reconfigurable radio-frequency/microwave applications. 1, 2 Recent studies have demonstrated that by alloying IIIB element, e.g., Sc, with conventional III-nitride semiconductors, the polarity switching barrier of III-nitride materials could be greatly reduced, resulting in a new class of ferroelectric materials with giant polarization, including ScAlN and ScGaN. 3–5 The giant polarization provides ample design space for ferroelectric charge coupling in the channel, potentially supporting broader threshold voltage tuning window, which is tantalizing for memory and reconfigurable RF/microwave applications. 6, 7 Herein, we report the first experimental demonstration of ferroelectric switching in ultrathin (5 nm) ScAlN, as well as the realization of fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high electron mobility transistors (FeHEMTs).
Date of Conference: 25-28 June 2023
Date Added to IEEE Xplore: 24 July 2023
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Publisher: IEEE
Conference Location: Santa Barbara, CA, USA

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