Abstract:
The Nothing On Insulator (NOI) transistor, with a nano-cavity, was recently proposed. It has promising features, but difficult technological plan. Therefore, two main con...Show MoreMetadata
Abstract:
The Nothing On Insulator (NOI) transistor, with a nano-cavity, was recently proposed. It has promising features, but difficult technological plan. Therefore, two main contributions are included in this paper: (i) a planar technological solution for a planar-NOI variant with oxide instead vacuum; (ii) a demonstration of the ID- VD exponential dependence of the planar-NOI variant, after the technological processing simulations. Finally, the simulations reveal two kinds of planar-NOI configurations. Both structures obey to the exponential Fowler-Nordheim formalism and can be further optimized by future measurements.
Published in: 2018 10th International Conference on Electronics, Computers and Artificial Intelligence (ECAI)
Date of Conference: 28-30 June 2018
Date Added to IEEE Xplore: 04 April 2019
ISBN Information: