Technology of fabrication and functional validations of planar-Nothing On Insulator devices with oxide instead vacuum | IEEE Conference Publication | IEEE Xplore

Technology of fabrication and functional validations of planar-Nothing On Insulator devices with oxide instead vacuum


Abstract:

The Nothing On Insulator (NOI) transistor, with a nano-cavity, was recently proposed. It has promising features, but difficult technological plan. Therefore, two main con...Show More

Abstract:

The Nothing On Insulator (NOI) transistor, with a nano-cavity, was recently proposed. It has promising features, but difficult technological plan. Therefore, two main contributions are included in this paper: (i) a planar technological solution for a planar-NOI variant with oxide instead vacuum; (ii) a demonstration of the ID- VD exponential dependence of the planar-NOI variant, after the technological processing simulations. Finally, the simulations reveal two kinds of planar-NOI configurations. Both structures obey to the exponential Fowler-Nordheim formalism and can be further optimized by future measurements.
Date of Conference: 28-30 June 2018
Date Added to IEEE Xplore: 04 April 2019
ISBN Information:
Conference Location: Iasi, Romania

References

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