Abstract:
We achieve 10Gbit/s transmissions using NRZ direct modulation on a hybrid III-V on Silicon laser. The device is fabricated by wafer-scale molecular bonding and exhibits a...Show MoreMetadata
Abstract:
We achieve 10Gbit/s transmissions using NRZ direct modulation on a hybrid III-V on Silicon laser. The device is fabricated by wafer-scale molecular bonding and exhibits a bit error rate less than 10−4 up to 40km reach and a wavelength tunability over 35nm.
Date of Conference: 21-25 September 2014
Date Added to IEEE Xplore: 24 November 2014
Electronic ISBN:978-2-9549-4440-1
Print ISSN: 1550-381X
Contents 