Abstract:
We fabricated waveguide germanium photodetectors (Ge-PDs) using silicon photonics technology at a commercial CMOS foundry. The fabricated Ge-PDs exhibited low dark curren...Show MoreMetadata
Abstract:
We fabricated waveguide germanium photodetectors (Ge-PDs) using silicon photonics technology at a commercial CMOS foundry. The fabricated Ge-PDs exhibited low dark current, high responsivity (1.1 A/W) and 40-GHz O/E response with TIA up to high input power of +5.8 dBm.
Published in: 2018 European Conference on Optical Communication (ECOC)
Date of Conference: 23-27 September 2018
Date Added to IEEE Xplore: 15 November 2018
ISBN Information:
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