Abstract:
Vertical p-i-n AlGaInAs lasers obtained from a single Selective Area Growth (SAG) step on a thin InP layer bonded to silicon wafers are presented. A PL extension from 149...Show MoreMetadata
Abstract:
Vertical p-i-n AlGaInAs lasers obtained from a single Selective Area Growth (SAG) step on a thin InP layer bonded to silicon wafers are presented. A PL extension from 1490 nm to 1645 nm was demonstrated on InP-SOI wafer. Based on this result, a record of 155 nm wide spectral range was obtained for FP lasers on InP-SiO2/Si wafer.
Date of Conference: 06-10 December 2020
Date Added to IEEE Xplore: 04 February 2021
ISBN Information:
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