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A very low temperature coefficient (< 1ppm/°C) BiCMOS high order voltage reference design | IEEE Conference Publication | IEEE Xplore

A very low temperature coefficient (< 1ppm/°C) BiCMOS high order voltage reference design


Abstract:

A very low temperature coefficient (<; 1 ppm/°C) BiCMOS curvature corrected bandgap voltage reference circuit design is presented in this paper. This voltage reference ci...Show More

Abstract:

A very low temperature coefficient (<; 1 ppm/°C) BiCMOS curvature corrected bandgap voltage reference circuit design is presented in this paper. This voltage reference circuit shows promising thermal performances. The simulated design has a temperature coefficient of only 0.661 ppm/°C in the temperature range between -40°C and 125°C with 5 V power supply and <;1 ma current without a buffer. The proposed bandgap voltage reference circuit is designed using 180 nm process models for the CMOS devices and generic models for the BJT devices.
Date of Conference: 05-07 June 2014
Date Added to IEEE Xplore: 07 August 2014
Electronic ISBN:978-1-4799-4774-4

ISSN Information:

Conference Location: Milwaukee, WI, USA

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