Abstract:
This communication describes a high-sensitivity, high dynamic range 768/spl times/576 pixel image sensor fabricated in 0.5 /spl mu/m standard CMOS technology and its desi...Show MoreMetadata
Abstract:
This communication describes a high-sensitivity, high dynamic range 768/spl times/576 pixel image sensor fabricated in 0.5 /spl mu/m standard CMOS technology and its design. The pixel pitch is 10 /spl mu/m/spl times/10 /spl mu/m with a fill factor of 50% while the chip area is 90 mm/sup 2/. The dynamic range is 118 dB while the measured noise equivalent exposure is 66 pJ/cm/sup 2/ at 635 nm wavelength. This yields a sensitivity of just 4.9 ml/spl times/ at 20 ms integration time which makes it also suitable for night vision applications.
Date of Conference: 23-23 September 2004
Date Added to IEEE Xplore: 15 November 2004
Print ISBN:0-7803-8480-6