Abstract:
In this paper, a new charge pump architecture is presented: it is based on PMOS pass transistors with dynamic biasing of gates and bodies. By controlling the gate and bod...Show MoreMetadata
Abstract:
In this paper, a new charge pump architecture is presented: it is based on PMOS pass transistors with dynamic biasing of gates and bodies. By controlling the gate and body voltages of each pass transistor, the voltage loss due to the device threshold is removed and the charge is pumped from one stage to the other with negligible voltage drop. Furthermore, the overdrive voltage of the pass transistors grows progressively from the first to the last boost stage. This new architecture was developed and validated through simulations and experimental measurements on AMS 0.8/spl mu/m standard CMOS technology.
Date of Conference: 12-16 September 2005
Date Added to IEEE Xplore: 05 December 2005
Print ISBN:0-7803-9205-1
Print ISSN: 1930-8833