Abstract:
Design for manufacturing, DFM, has been an increasingly important area for several years. Lithography at 90nm, 65nm, and below takes DFM into the critical zone for design...Show MoreMetadata
Abstract:
Design for manufacturing, DFM, has been an increasingly important area for several years. Lithography at 90nm, 65nm, and below takes DFM into the critical zone for designers. Designers must now use extreme measures to achieve full technology entitlement of performance, power, area, reliability and yield. This presentations focus on major physical DFM effects and their impact on designers. It uses real life examples from 90 and 65nm to illustrate problems and trends. Several focus issues are linked to design impact and onto rules, modeling and other mitigation techniques. This talks touch on several critical areas such as RET/OPC/litho/etch, simulation, layout rules, and extraction. Both systematic and random effects are mentioned. Also covered are examples of some methods that are used to model or design around these issues to enable designers to meet technology entitlement goals.
Date of Conference: 12-16 September 2005
Date Added to IEEE Xplore: 05 December 2005
Print ISBN:0-7803-9205-1
Print ISSN: 1930-8833