Abstract:
A 60 GHz wideband power amplifier (PA) is fabricated in standard CMOS SOI 65 nm process. The PA is constituted by two cascode stages. Input, output and inter-stage matchi...Show MoreMetadata
Abstract:
A 60 GHz wideband power amplifier (PA) is fabricated in standard CMOS SOI 65 nm process. The PA is constituted by two cascode stages. Input, output and inter-stage matching use coplanar wave guide (CPW) transmission lines that have low losses thanks to the high resistivity SOI substrate. The PA measurements are carried out for supply voltages VDD going from 1.2 V to 2.6 V and achieve a saturation power of 10 dBm to 16.5 dBm respectively. The peak power added efficiency is higher than 20% for all applied VDD values.
Published in: 2009 Proceedings of ESSCIRC
Date of Conference: 14-18 September 2009
Date Added to IEEE Xplore: 10 November 2009
ISBN Information:
Print ISSN: 1930-8833
Contents 