Abstract:
A p-type FinFET manufacturing process has been presented. It is a starting point for development of H+ ion-sensitive n-type nanowire FETs (ISFETs). In the paper, new proc...Show MoreMetadata
Abstract:
A p-type FinFET manufacturing process has been presented. It is a starting point for development of H+ ion-sensitive n-type nanowire FETs (ISFETs). In the paper, new process steps are pointed out together with SEM examination. Characteristics of the n-type junctionless FETs have been measured in buffer solutions in a beaker and in contact with a single drop of the liquid. ISFET current versus pH and voltage versus pH curves have been presented and discussed. Relatively small hysteresis and drifts in pH measurements have been found.
Date of Conference: 17-21 September 2012
Date Added to IEEE Xplore: 10 November 2012
ISBN Information: