Abstract:
A new model and a theory to capture the effects of halo (pocket) implants on the flicker noise of the advanced-node MOSFETs have been proposed and verified with measureme...Show MoreMetadata
Abstract:
A new model and a theory to capture the effects of halo (pocket) implants on the flicker noise of the advanced-node MOSFETs have been proposed and verified with measurements. The model can accurately capture the bias dependence of the drain-current flicker-noise (FN) power density. Also for the first time, we explain and model the unexpected channel-length dependence of FN power density in strong-halo devices.
Date of Conference: 16-20 September 2013
Date Added to IEEE Xplore: 22 May 2014
Electronic ISBN:978-1-4799-0649-9