MOSFETs and Tunnel-FETs (TFETs) based on arrays of nanowires (NWs) with 10 × 10 nm² cross-section have been fabricated with strained silicon on insulator substrates. MOSFET devices show near ideal subthreshold slope close to 60 mV/dec proving excellent channel control achieved by high-klmetal gate stack. As expected fundamental differences between MOSFETs and TFETs in current-voltage characteristics are observed and analyzed. Low frequency noise spectra are studied for both types of devices. The devices show different behavior in terms of noise spectral density as a function of the applied gate voltage. A Hooge parameter of α = 7.3 × 10⁻³ is derived for the NW MOSFETs.