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Investigation of gate material ductility enables flexible a-IGZO TFTs bendable to a radius of 1.7 mm | IEEE Conference Publication | IEEE Xplore

Investigation of gate material ductility enables flexible a-IGZO TFTs bendable to a radius of 1.7 mm


Abstract:

TFTs on flexible plastic foils have the potential to enable new applications like electronic skins or smart textiles. Due to the temperature sensitivity of plastic substr...Show More

Abstract:

TFTs on flexible plastic foils have the potential to enable new applications like electronic skins or smart textiles. Due to the temperature sensitivity of plastic substrates, amorphous In-Ga-Zn-O (a-IGZO) is a promising semiconductor since it provides a carrier mobility >10 cm2/Vs when deposited at room temperature. Therefore, a-IGZO TFTs have significantly increased electrical performance compared to organic TFTs, but also suffer from a decreased bendability. Here, focused ion beam (FIB) images are used to identify the gate metal as the dominant factor for the formation of cracks in bent a-IGZO TFTs. Flexible a-IGZO TFTs using a high-k Al2O3 gate dielectric and different gate contact materials (Cr, Pt, Ti, or Cu) exhibit a similar effective mobility μFE, threshold voltage VTH, and on-off current ratio of: ≈15 cm2/Vs, ≈1 V, and >109. Simultaneously, bending experiments confirmed that their bendability depends on the ductility of the gate material. These findings are used to identify Cu as suitable gate material, and to fabricate a-IGZO TFTs on free-standing plastic foil which can be operated at a bending radius of 1.7 mm (1.55% strain), whereas bending shifts μFE and VTH only by + 2%, and - 6 mV.
Date of Conference: 16-20 September 2013
Date Added to IEEE Xplore: 22 May 2014
Electronic ISBN:978-1-4799-0649-9

ISSN Information:

Conference Location: Bucharest, Romania

References

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