Loading [MathJax]/extensions/MathMenu.js
Experimental demonstration of improved analog device performance in GAA-NW-TFETs | IEEE Conference Publication | IEEE Xplore

Experimental demonstration of improved analog device performance in GAA-NW-TFETs


Abstract:

We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10 nm diameter GAA-NW-TFETs reach ...Show More

Abstract:

We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10 nm diameter GAA-NW-TFETs reach a maximum transconductance efficiency of 12.7V−1 which is close to values obtained from simulations. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameter of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-current up to 23 μ A/μm at a gate overdrive of Vgt = Vd = −1 V were achieved for the GAA-NW-TFETs. Furthermore a good output current-saturation is observed leading to high intrinsic gain up to 217 which is even higher than in 20 nm FinFETs.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
ISBN Information:

ISSN Information:

Conference Location: Venice Lido, Italy

References

References is not available for this document.